Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric

Pavel Bolshakov; Rodolfo A. Rodriguez-Davila; Manuel Quevedo-Lopez; Chadwin D. Young

doi:10.1109/IRPS.2019.8720547

Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric

Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Manuel Quevedo-Lopez, Chadwin D. Young

Departamento de Investigación en Polímeros y Materiales

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

2 Citas (Scopus)

Resumen

Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al₂O₃deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored where the 100°C samples demonstrated a 'turn-around' phenomenon in the ΔV_T compared to the 250°C samples. The 250°C samples show consistent ΔV_T, suggesting a higher Al₂O₃deposition temperature results in the absence of the defect responsible for the 'turn-around' effect. Both sets also demonstrate negligible degradation in Δg_m and ASS -suggesting little to no influence on the V_T shift by interfacial state generation.

Idioma original	Inglés
Título de la publicación alojada	2019 IEEE International Reliability Physics Symposium, IRPS 2019
Editorial	Institute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)	9781538695043
DOI	https://doi.org/10.1109/IRPS.2019.8720547
Estado	Publicada - 22 may. 2019
Evento	2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, Estados Unidos Duración: 31 mar. 2019 → 4 abr. 2019

Serie de la publicación

Nombre	IEEE International Reliability Physics Symposium Proceedings
Volumen	2019-March
ISSN (versión impresa)	1541-7026

Conferencia

Conferencia	2019 IEEE International Reliability Physics Symposium, IRPS 2019
País/Territorio	Estados Unidos
Ciudad	Monterey
Período	31/03/19 → 4/04/19

Nota bibliográfica

Publisher Copyright:
© 2019 IEEE.

Acceder al documento

10.1109/IRPS.2019.8720547

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Bolshakov, P., Rodriguez-Davila, R. A., Quevedo-Lopez, M., & Young, C. D. (2019). Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric. En 2019 IEEE International Reliability Physics Symposium, IRPS 2019 Artículo 8720547 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2019.8720547

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title = "Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric",

abstract = "Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al2O3deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored where the 100°C samples demonstrated a 'turn-around' phenomenon in the ΔVT compared to the 250°C samples. The 250°C samples show consistent ΔVT, suggesting a higher Al2O3deposition temperature results in the absence of the defect responsible for the 'turn-around' effect. Both sets also demonstrate negligible degradation in Δgm and ASS -suggesting little to no influence on the VT shift by interfacial state generation.",

keywords = "Al2O3, PBI, TFTs, VT, ZnO",

author = "Pavel Bolshakov and Rodriguez-Davila, {Rodolfo A.} and Manuel Quevedo-Lopez and Young, {Chadwin D.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Reliability Physics Symposium, IRPS 2019 ; Conference date: 31-03-2019 Through 04-04-2019",

year = "2019",

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doi = "10.1109/IRPS.2019.8720547",

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Bolshakov, P, Rodriguez-Davila, RA, Quevedo-Lopez, M & Young, CD 2019, Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric. En 2019 IEEE International Reliability Physics Symposium, IRPS 2019., 8720547, IEEE International Reliability Physics Symposium Proceedings, vol. 2019-March, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, Estados Unidos, 31/03/19. https://doi.org/10.1109/IRPS.2019.8720547

Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric. / Bolshakov, Pavel; Rodriguez-Davila, Rodolfo A.; Quevedo-Lopez, Manuel et al.
2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8720547 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

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AB - Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al2O3deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored where the 100°C samples demonstrated a 'turn-around' phenomenon in the ΔVT compared to the 250°C samples. The 250°C samples show consistent ΔVT, suggesting a higher Al2O3deposition temperature results in the absence of the defect responsible for the 'turn-around' effect. Both sets also demonstrate negligible degradation in Δgm and ASS -suggesting little to no influence on the VT shift by interfacial state generation.

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