TY - JOUR
T1 - Preparation of thin films bismuth sulfide by chemical bath deposition technique, a simplified formulation
AU - Chavez-Mendiola, E.
AU - Acosta-Enríquez, M. C.
AU - Carrillo-Castillo, A.
AU - Arellano-Tánori, O.
AU - Rivera-Nieblas, J. O.
AU - Castillo, S. J.
N1 - Publisher Copyright:
© 2018, S.C. Virtual Company of Phisics S.R.L. All rights reserved.
PY - 2018/7
Y1 - 2018/7
N2 - In this work where obtained bismuth sulfide thin films, by a simplified formulation, the method used for the synthesis of bismuth sulfide thin films, is denominated chemical bath deposition. It was determined the optical absorption characterization showed a direct bandgap between 1.3eV and 1.6eV. Scanning electron microscopy images are also reported, which shows homogeneity in the morphology of the obtained films, as function of the deposition time. When analyzing the material by transmission electron microscopy technique, it was obtained an interplanar distance of 3.11Å, also characterized by X-ray diffraction obtaining a main signal in 2θ = 27.3°.
AB - In this work where obtained bismuth sulfide thin films, by a simplified formulation, the method used for the synthesis of bismuth sulfide thin films, is denominated chemical bath deposition. It was determined the optical absorption characterization showed a direct bandgap between 1.3eV and 1.6eV. Scanning electron microscopy images are also reported, which shows homogeneity in the morphology of the obtained films, as function of the deposition time. When analyzing the material by transmission electron microscopy technique, it was obtained an interplanar distance of 3.11Å, also characterized by X-ray diffraction obtaining a main signal in 2θ = 27.3°.
KW - Bismuth sulfide
KW - Chemical bath deposition
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=85052577777&partnerID=8YFLogxK
M3 - Artículo
SN - 1584-8663
VL - 15
SP - 395
EP - 404
JO - Chalcogenide Letters
JF - Chalcogenide Letters
IS - 7
ER -