Quadrant photodiode for electronic processing

Alicia Vera-Marquina*, Alejandro Diaz Sanchez, J. Miguel Rocha-Pérez, D. Berman-Mendoza, Ivan Padilla

*Autor correspondiente de este trabajo

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

6 Citas (Scopus)

Resumen

In this work, a photodiode for the visible spectral range, which will be integrated monolithically with CMOS circuits, is presented. Such Optoelectronic Integrated Circuit (OEIC) with high sensitivity in the 400-900 nm spectral range is utilized to realize electronic processing from the light beam position that hit a specific area of the photodetector. The output signals with voltages of 0V and 3 V can be implemented with a controller circuit. By the Using of He-Ne Laser at 633 nm as incident light, the responsivity of the Position Sense Photodetector (PSPD) was 0.35 A/W and the rise and fall time of less than 30 ns were achieved. These parameters were necessaries to achieve the photodiode integration in an industrial 0.5 μm CMOS process, only additional mask was needed in order to block out the threshold voltage implantation in the photo-active region. Therefore both designs of photodiode and the electronic processing circuit separately, are shown here, all design will be integrated monolithically in the same Silicon chip.

Idioma originalInglés
Título de la publicación alojadaInfrared Systems and Photoelectronic Technology IV
DOI
EstadoPublicada - 2009
EventoInfrared Systems and Photoelectronic Technology IV - San Diego, CA, Estados Unidos
Duración: 4 ago. 20096 ago. 2009

Serie de la publicación

NombreProceedings of SPIE - The International Society for Optical Engineering
Volumen7419
ISSN (versión impresa)0277-786X

Conferencia

ConferenciaInfrared Systems and Photoelectronic Technology IV
País/TerritorioEstados Unidos
CiudadSan Diego, CA
Período4/08/096/08/09

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