Relationship of HfO2 material properties and transistor performance

P. D. Kirsch; M. A. Quevedo; G. Pant; S. Krishnan; S. C. Song; H. J. Li; J. J. Peterson; B. H. Lee; R. W. Wallace; M. Kim; B. E. Gnade

doi:10.1109/VTSA.2006.251090

Relationship of HfO₂ material properties and transistor performance

P. D. Kirsch^*, M. A. Quevedo, G. Pant, S. Krishnan, S. C. Song, H. J. Li, J. J. Peterson, B. H. Lee, R. W. Wallace, M. Kim, B. E. Gnade

^*Autor correspondiente de este trabajo

Departamento de Investigación en Polímeros y Materiales

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

2 Citas (Scopus)

Resumen

We report on the relationship between the materials science of a HfO ₂/TiN stack and transistor performance. Atomic layer deposited (ALD) HfO₂ can be scaled to a physical thickness of 1.2 nm resulting in EOT-1.0 nm. In scaling HfO₂, the interfacial SiO_x layer (IL) is also scaled and the extent of HfO₂ crystallization is reduced. Reduced HfO₂ crystallinity is coincident with reduced threshold voltage instability (10 mV) and increased electron mobility (82% Univ. SiO₂). For these stable, high mobility devices, we find that HfO₂ can coordinate N as Hf-N without excessive nitridation of the IL.

Idioma original	Inglés
Título de la publicación alojada	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Páginas	113-114
Número de páginas	2
DOI	https://doi.org/10.1109/VTSA.2006.251090
Estado	Publicada - 2006
Evento	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwán Duración: 24 abr. 2006 → 26 abr. 2006

Serie de la publicación

Nombre	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conferencia

Conferencia	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
País/Territorio	Taiwán
Ciudad	Hsinchu
Período	24/04/06 → 26/04/06

Acceder al documento

10.1109/VTSA.2006.251090

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Kirsch, P. D., Quevedo, M. A., Pant, G., Krishnan, S., Song, S. C., Li, H. J., Peterson, J. J., Lee, B. H., Wallace, R. W., Kim, M., & Gnade, B. E. (2006). Relationship of HfO₂ material properties and transistor performance. En 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 113-114). Artículo 4016626 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251090

@inproceedings{232b5c3abc204c4cade815718892d01e,

title = "Relationship of HfO2 material properties and transistor performance",

abstract = "We report on the relationship between the materials science of a HfO 2/TiN stack and transistor performance. Atomic layer deposited (ALD) HfO2 can be scaled to a physical thickness of 1.2 nm resulting in EOT-1.0 nm. In scaling HfO2, the interfacial SiOx layer (IL) is also scaled and the extent of HfO2 crystallization is reduced. Reduced HfO2 crystallinity is coincident with reduced threshold voltage instability (10 mV) and increased electron mobility (82% Univ. SiO2). For these stable, high mobility devices, we find that HfO2 can coordinate N as Hf-N without excessive nitridation of the IL.",

author = "Kirsch, {P. D.} and Quevedo, {M. A.} and G. Pant and S. Krishnan and Song, {S. C.} and Li, {H. J.} and Peterson, {J. J.} and Lee, {B. H.} and Wallace, {R. W.} and M. Kim and Gnade, {B. E.}",

year = "2006",

doi = "10.1109/VTSA.2006.251090",

language = "Ingl{\'e}s",

isbn = "142440181X",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "113--114",

booktitle = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA ; Conference date: 24-04-2006 Through 26-04-2006",

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Kirsch, PD, Quevedo, MA, Pant, G, Krishnan, S, Song, SC, Li, HJ, Peterson, JJ, Lee, BH, Wallace, RW, Kim, M & Gnade, BE 2006, Relationship of HfO₂ material properties and transistor performance. En 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers., 4016626, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 113-114, 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA, Hsinchu, Taiwán, 24/04/06. https://doi.org/10.1109/VTSA.2006.251090

Relationship of HfO₂ material properties and transistor performance. / Kirsch, P. D.; Quevedo, M. A.; Pant, G. et al.
2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 113-114 4016626 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Relationship of HfO2 material properties and transistor performance

AU - Kirsch, P. D.

AU - Quevedo, M. A.

AU - Pant, G.

AU - Krishnan, S.

AU - Song, S. C.

AU - Li, H. J.

AU - Peterson, J. J.

AU - Lee, B. H.

AU - Wallace, R. W.

AU - Kim, M.

AU - Gnade, B. E.

PY - 2006

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N2 - We report on the relationship between the materials science of a HfO 2/TiN stack and transistor performance. Atomic layer deposited (ALD) HfO2 can be scaled to a physical thickness of 1.2 nm resulting in EOT-1.0 nm. In scaling HfO2, the interfacial SiOx layer (IL) is also scaled and the extent of HfO2 crystallization is reduced. Reduced HfO2 crystallinity is coincident with reduced threshold voltage instability (10 mV) and increased electron mobility (82% Univ. SiO2). For these stable, high mobility devices, we find that HfO2 can coordinate N as Hf-N without excessive nitridation of the IL.

AB - We report on the relationship between the materials science of a HfO 2/TiN stack and transistor performance. Atomic layer deposited (ALD) HfO2 can be scaled to a physical thickness of 1.2 nm resulting in EOT-1.0 nm. In scaling HfO2, the interfacial SiOx layer (IL) is also scaled and the extent of HfO2 crystallization is reduced. Reduced HfO2 crystallinity is coincident with reduced threshold voltage instability (10 mV) and increased electron mobility (82% Univ. SiO2). For these stable, high mobility devices, we find that HfO2 can coordinate N as Hf-N without excessive nitridation of the IL.

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DO - 10.1109/VTSA.2006.251090

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T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

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BT - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers

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Kirsch PD, Quevedo MA, Pant G, Krishnan S, Song SC, Li HJ et al. Relationship of HfO₂ material properties and transistor performance. En 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 113-114. 4016626. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2006.251090