Relatively low-temperature processing and its impact on device performance and reliability

C. D. Young, P. Bolshakov, R. A. Rodriguez Davila, P. Zhao, C. Smyth, M. Quevedo-Lopez, R. M. Wallace

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

1 Cita (Scopus)

Resumen

Fabrication of MoS2, ZnO, and IGZO transistors at low enough temperatures that are suitable for large-area/flexible electronics is presented. Evaluating critical processing conditions and approaches on device performance is critical to understanding and improving devices to enable large-area/flexible circuits for the IoT. For MoS2, a study of the implications of photoresist residue on MoS2 in the source/drain contact region was done. Results determined that an O2 plasma exposure in this location can remove the resist residue and create a robust TiOx/MoS2 contact, where an ~15x increase in mobility and ~20x reduction in contact resistance was achieved for O2 plasma treated transistors. Thin-film transistor fabrication of ZnO and IGZO as the semiconductor yielded saturation mobilities of 14.2 and 9.0 cm2/V•s, respectively. Among other parameters, the contact resistance was noticeably lower for ZnO due to its polycrystalline morphology compared to the amorphous IGZO, which was determined to be more resistive.

Idioma originalInglés
Título de la publicación alojada2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
EditoresYue Kuo
EditorialElectrochemical Society Inc.
Páginas89-97
Número de páginas9
Edición1
ISBN (versión digital)9781607688730, 9781607688730
DOI
EstadoPublicada - 2019
Publicado de forma externa
Evento7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 - Kyoto, Japón
Duración: 19 may. 201923 may. 2019

Serie de la publicación

NombreECS Transactions
Número1
Volumen90
ISSN (versión impresa)1938-6737
ISSN (versión digital)1938-5862

Conferencia

Conferencia7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
País/TerritorioJapón
CiudadKyoto
Período19/05/1923/05/19

Nota bibliográfica

Publisher Copyright:
© The Electrochemical Society.

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