Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiation

R. A. Rodriguez-Davila, L. Fernandez-Izquierdo, J. Fink, T. Moise, R. C. Baumann, B. Gnade, M. Quevedo-Lopez, C. D. Young

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

This study presents a detailed analysis of total ionizing dose (TID) effects induced by X-ray irradiation on zinc oxide (ZnO) and Indium-Gallium-Zinc Oxide (IGZO) thin-film transistors (TFTs). We performed a comprehensive evaluation that includes structural, morphological, and electronic characterizations to assess the impact of X-ray irradiation on the inherent properties of metal-oxide-semiconductor layers within the TFTs. Comparative assessments following variable dose exposures provide insights into the degradation mechanisms and emphasize the differential resilience of ZnO and IGZO-based devices to radiative environments.

Idioma originalInglés
Título de la publicación alojada2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Proceedings
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9798350369762
DOI
EstadoPublicada - 2024
Publicado de forma externa
Evento2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Grapevine, Estados Unidos
Duración: 14 abr. 202418 abr. 2024

Serie de la publicación

NombreIEEE International Reliability Physics Symposium Proceedings
ISSN (versión impresa)1541-7026

Conferencia

Conferencia2024 IEEE International Reliability Physics Symposium, IRPS 2024
País/TerritorioEstados Unidos
CiudadGrapevine
Período14/04/2418/04/24

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© 2024 IEEE.

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