Resumen
This study presents a detailed analysis of total ionizing dose (TID) effects induced by X-ray irradiation on zinc oxide (ZnO) and Indium-Gallium-Zinc Oxide (IGZO) thin-film transistors (TFTs). We performed a comprehensive evaluation that includes structural, morphological, and electronic characterizations to assess the impact of X-ray irradiation on the inherent properties of metal-oxide-semiconductor layers within the TFTs. Comparative assessments following variable dose exposures provide insights into the degradation mechanisms and emphasize the differential resilience of ZnO and IGZO-based devices to radiative environments.
Idioma original | Inglés |
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Título de la publicación alojada | 2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Proceedings |
Editorial | Institute of Electrical and Electronics Engineers Inc. |
ISBN (versión digital) | 9798350369762 |
DOI | |
Estado | Publicada - 2024 |
Publicado de forma externa | Sí |
Evento | 2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Grapevine, Estados Unidos Duración: 14 abr. 2024 → 18 abr. 2024 |
Serie de la publicación
Nombre | IEEE International Reliability Physics Symposium Proceedings |
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ISSN (versión impresa) | 1541-7026 |
Conferencia
Conferencia | 2024 IEEE International Reliability Physics Symposium, IRPS 2024 |
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País/Territorio | Estados Unidos |
Ciudad | Grapevine |
Período | 14/04/24 → 18/04/24 |
Nota bibliográfica
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