Role of zinc source in chemical bath deposition of zinc sulfide thin films on Si3N4

P. A. Luque; Claudia M. Gómez-Gutiérrez; G. Lastra; A. Carrillo-Castillo; M. A. Quevedo-López; A. Olivas

doi:10.1007/s11664-014-3334-8

Role of zinc source in chemical bath deposition of zinc sulfide thin films on Si₃N₄

P. A. Luque^*, Claudia M. Gómez-Gutiérrez, G. Lastra, A. Carrillo-Castillo, M. A. Quevedo-López, A. Olivas

^*Autor correspondiente de este trabajo

Departamento de Investigación en Polímeros y Materiales

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

6 Citas (Scopus)

Resumen

Zinc sulfide (ZnS) thin films have been grown by chemical bath deposition (CBD) using different zinc sources on a silicon nitride (Si₃N₄) substrate in an alkaline solution. The zinc precursors used were zinc acetate, zinc nitrate, and zinc sulfate. The structural and optical characteristics of the ZnS thin films obtained were analyzed. The morphology of the surface showed that the films were compact and uniform, with some pinholes in the surface depending on the zinc source. The most homogeneous and compact surfaces were those obtained using zinc nitrate as the zinc source with a root-mean-square (RMS) value of 3 nm. The transmission spectra indicated average transmittance of 80% to 85% in the spectral range from 300 nm to 800 nm, and the optical bandgap calculated for the films was around 3.71 eV to 3.74 eV.

Idioma original	Inglés
Páginas (desde-hasta)	4317-4321
Número de páginas	5
Publicación	Journal of Electronic Materials
Volumen	43
N.º	11
DOI	https://doi.org/10.1007/s11664-014-3334-8
Estado	Publicada - 1 nov. 2014

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Publisher Copyright:
© 2014 The Minerals, Metals & Materials Society.

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@article{f165829147d74627adefc302c121f896,

title = "Role of zinc source in chemical bath deposition of zinc sulfide thin films on Si3N4",

abstract = "Zinc sulfide (ZnS) thin films have been grown by chemical bath deposition (CBD) using different zinc sources on a silicon nitride (Si3N4) substrate in an alkaline solution. The zinc precursors used were zinc acetate, zinc nitrate, and zinc sulfate. The structural and optical characteristics of the ZnS thin films obtained were analyzed. The morphology of the surface showed that the films were compact and uniform, with some pinholes in the surface depending on the zinc source. The most homogeneous and compact surfaces were those obtained using zinc nitrate as the zinc source with a root-mean-square (RMS) value of 3 nm. The transmission spectra indicated average transmittance of 80% to 85% in the spectral range from 300 nm to 800 nm, and the optical bandgap calculated for the films was around 3.71 eV to 3.74 eV.",

keywords = "Chemical bath deposition, ZnS, thin films, zinc source",

author = "Luque, {P. A.} and G{\'o}mez-Guti{\'e}rrez, {Claudia M.} and G. Lastra and A. Carrillo-Castillo and Quevedo-L{\'o}pez, {M. A.} and A. Olivas",

note = "Publisher Copyright: {\textcopyright} 2014 The Minerals, Metals & Materials Society.",

year = "2014",

month = nov,

day = "1",

doi = "10.1007/s11664-014-3334-8",

language = "Ingl{\'e}s",

volume = "43",

pages = "4317--4321",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "11",

}

TY - JOUR

T1 - Role of zinc source in chemical bath deposition of zinc sulfide thin films on Si3N4

AU - Luque, P. A.

AU - Gómez-Gutiérrez, Claudia M.

AU - Lastra, G.

AU - Carrillo-Castillo, A.

AU - Quevedo-López, M. A.

AU - Olivas, A.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Zinc sulfide (ZnS) thin films have been grown by chemical bath deposition (CBD) using different zinc sources on a silicon nitride (Si3N4) substrate in an alkaline solution. The zinc precursors used were zinc acetate, zinc nitrate, and zinc sulfate. The structural and optical characteristics of the ZnS thin films obtained were analyzed. The morphology of the surface showed that the films were compact and uniform, with some pinholes in the surface depending on the zinc source. The most homogeneous and compact surfaces were those obtained using zinc nitrate as the zinc source with a root-mean-square (RMS) value of 3 nm. The transmission spectra indicated average transmittance of 80% to 85% in the spectral range from 300 nm to 800 nm, and the optical bandgap calculated for the films was around 3.71 eV to 3.74 eV.

AB - Zinc sulfide (ZnS) thin films have been grown by chemical bath deposition (CBD) using different zinc sources on a silicon nitride (Si3N4) substrate in an alkaline solution. The zinc precursors used were zinc acetate, zinc nitrate, and zinc sulfate. The structural and optical characteristics of the ZnS thin films obtained were analyzed. The morphology of the surface showed that the films were compact and uniform, with some pinholes in the surface depending on the zinc source. The most homogeneous and compact surfaces were those obtained using zinc nitrate as the zinc source with a root-mean-square (RMS) value of 3 nm. The transmission spectra indicated average transmittance of 80% to 85% in the spectral range from 300 nm to 800 nm, and the optical bandgap calculated for the films was around 3.71 eV to 3.74 eV.

KW - Chemical bath deposition

KW - ZnS

KW - thin films

KW - zinc source

UR - http://www.scopus.com/inward/record.url?scp=84907711448&partnerID=8YFLogxK

U2 - 10.1007/s11664-014-3334-8

DO - 10.1007/s11664-014-3334-8

M3 - Artículo

SN - 0361-5235

VL - 43

SP - 4317

EP - 4321

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -