This article proposes a novel design approach for the fabrication of lateral Schottky barrier diodes (SBD) using a wide bandgap oxide semiconductor on silicon. Structural and electrical properties of the fabricated device are reported and compared with published data. The metal–insulator–semiconductor (MIS) Schottky barrier is realized between the room-temperature sputtered Al/a-Ga2O3 on single-crystal <100> boron-doped silicon substrate (p-type). The device fabrication process is implemented entirely at room temperature. The proposed trench diode yields an ideality factor of 1.65 and a rectification ratio of ≈1 × 106 at ±5.0 V. The extracted specific ON resistance is 78 mΩ cm2, and the breakdown voltage is not observed for 180 V for a 200-nm-thin layer of a-Ga2O3. Due to such low-temperature process, simple fabrication steps, and notably high Baliga's figure-of-merit (BFOM), the proposed diode is, therefore, promising for power electronics applications.
|Número de artículo||2200054|
|Publicación||Physica Status Solidi (A) Applications and Materials Science|
|Estado||Publicada - may 2022|
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