Spin dependent recombination in CdTe/CdS solar cells

S. I. Goodridge, P. M. Lenahan, C. D. Young, M. Quevedo-Lopez, J. Avila-Avendano

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

We report upon a new analytical approach for cadmium telluride/cadmium sulfide photovoltaic cells that is directly and exclusively sensitive to recombination center defects within the devices. The apparatus required to carry out these measurements is relatively straightforward and the response is robust. The measurements exploit the fact that recombination events through deep level defects are spin dependent and the presence of relatively small magnetic fields can alter spin dependent phenomena. The measurement involves small changes in the recombination current as a function of magnetic field when device current is strongly affected by recombination events.

Idioma originalInglés
Título de la publicación alojada2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas490-495
Número de páginas6
ISBN (versión digital)9781509056057
DOI
EstadoPublicada - 2017
Publicado de forma externa
Evento44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, Estados Unidos
Duración: 25 jun. 201730 jun. 2017

Serie de la publicación

Nombre2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conferencia

Conferencia44th IEEE Photovoltaic Specialist Conference, PVSC 2017
País/TerritorioEstados Unidos
CiudadWashington
Período25/06/1730/06/17

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© 2017 IEEE.

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