Resumen
We report upon a new analytical approach for cadmium telluride/cadmium sulfide photovoltaic cells that is directly and exclusively sensitive to recombination center defects within the devices. The apparatus required to carry out these measurements is relatively straightforward and the response is robust. The measurements exploit the fact that recombination events through deep level defects are spin dependent and the presence of relatively small magnetic fields can alter spin dependent phenomena. The measurement involves small changes in the recombination current as a function of magnetic field when device current is strongly affected by recombination events.
Idioma original | Inglés |
---|---|
Título de la publicación alojada | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
Editorial | Institute of Electrical and Electronics Engineers Inc. |
Páginas | 1553-1556 |
Número de páginas | 4 |
ISBN (versión digital) | 9781509027248 |
DOI | |
Estado | Publicada - 18 nov. 2016 |
Publicado de forma externa | Sí |
Evento | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, Estados Unidos Duración: 5 jun. 2016 → 10 jun. 2016 |
Serie de la publicación
Nombre | Conference Record of the IEEE Photovoltaic Specialists Conference |
---|---|
Volumen | 2016-November |
ISSN (versión impresa) | 0160-8371 |
Conferencia
Conferencia | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
---|---|
País/Territorio | Estados Unidos |
Ciudad | Portland |
Período | 5/06/16 → 10/06/16 |
Nota bibliográfica
Publisher Copyright:© 2016 IEEE.