Spin dependent recombination in CdTe/CdS solar cells

S. I. Goodridge, P. M. Lenahan, C. D. Young, M. Quevedo-Lopez, J. Avila-Avendano

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

We report upon a new analytical approach for cadmium telluride/cadmium sulfide photovoltaic cells that is directly and exclusively sensitive to recombination center defects within the devices. The apparatus required to carry out these measurements is relatively straightforward and the response is robust. The measurements exploit the fact that recombination events through deep level defects are spin dependent and the presence of relatively small magnetic fields can alter spin dependent phenomena. The measurement involves small changes in the recombination current as a function of magnetic field when device current is strongly affected by recombination events.

Idioma originalInglés
Título de la publicación alojada2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas1553-1556
Número de páginas4
ISBN (versión digital)9781509027248
DOI
EstadoPublicada - 18 nov. 2016
Publicado de forma externa
Evento43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, Estados Unidos
Duración: 5 jun. 201610 jun. 2016

Serie de la publicación

NombreConference Record of the IEEE Photovoltaic Specialists Conference
Volumen2016-November
ISSN (versión impresa)0160-8371

Conferencia

Conferencia43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
País/TerritorioEstados Unidos
CiudadPortland
Período5/06/1610/06/16

Nota bibliográfica

Publisher Copyright:
© 2016 IEEE.

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