Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

L. A. García-Cerda, B. A. Puente-Urbina, M. A. Quevedo-López, B. E. Gnade, L. Baldenegro-Pérez, H. N. Alshareef, M. A. Hernández-Landaverde

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Resumen

In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm.

Idioma originalInglés
Título de la publicación alojadaAdvanced Electron Microscopy and Nanomaterials
EditorialTrans Tech Publications Ltd
Páginas113-116
Número de páginas4
ISBN (versión impresa)087849281X, 9780878492817
DOI
EstadoPublicada - 2010
Publicado de forma externa
Evento1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09 - Saltillo, Coahuila, México
Duración: 29 sep. 20092 oct. 2009

Serie de la publicación

NombreMaterials Science Forum
Volumen644
ISSN (versión impresa)0255-5476
ISSN (versión digital)1662-9752

Conferencia

Conferencia1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09
País/TerritorioMéxico
CiudadSaltillo, Coahuila
Período29/09/092/10/09

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