Structural, optical and electrical characterization of In/CdS/glass thermally annealed system

S. J. Castillo*, A. Mendoza-Galván, R. Ramírez-Bon, F. J. Espinoza-Beltrán, M. Sotelo-Lerma, J. González-Hernández, G. Martínez

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

46 Citas (Scopus)

Resumen

Chemical bath deposited CdS thin films coated with an evaporated indium thin film were analyzed by electrical, optical absorption, spectroscopic ellipsometry, X-ray and AFM measurements. As-deposited and thermally annealed (250-400 °C) samples were evaluated. Heat treatments promote the formation of an external In2O3 layer, as revealed by X-ray data. Indium atoms diffuse to the CdS layer from an intermediate indium layer. CdS doped with In with resistivities of approximately 10-1-10-2 Ω/cm were obtained after annealing the In/CdS/glass system at 350 and 400 °C. From the ellipsometry spectra, the evolution of the initial two-layer structure, In/CdS/glass, with thermal annealing was investigated. The analysis shows a more complex structure than the In2O3/In/CdS/glass structure previously proposed.

Idioma originalInglés
Páginas (desde-hasta)10-14
Número de páginas5
PublicaciónThin Solid Films
Volumen373
N.º1-2
DOI
EstadoPublicada - 3 sep. 2000

Huella

Profundice en los temas de investigación de 'Structural, optical and electrical characterization of In/CdS/glass thermally annealed system'. En conjunto forman una huella única.

Citar esto