Study of non-ideal effects in ZnO TFT’s

T. Mendivil-Reynoso, D. Berman-Mendoza, M. C. Acosta-Enríquez, L. Rojas-Blanco, L. P. Ramírez-Rodríguez*, R. Ramírez-Bon, S. J. Castillo

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva


In this work we report the non-ideal effects on the performance of ZnO-based Thin Film Transistors (TFTs) as an active channel. This TFT was grown by RF magnetron sputtering technique. The transistor structure fabricated in this study consists of ZnO/SiO2/n-Si/Au- Gate. The TFTs were done under two conditions: Depositing the active layer in the substrate with constant temperature of 150°C and with room temperature, both with different channel length of 10, 20, 40 and 80 μm, and constant channel width of 450 μm. In both conditions of temperature for the substrates, a typical behavior of the family curves IDS vs VDS was obtained. Channel length modulation, hot carrier, and long channel are some of the effects that occur in the transistors presented in this research. The motilities, threshold voltage, on/off rates and gate swing voltages were calculated. Also, conductance and transconductance were evaluated for all cases, which are related with non-ideal effects.

Idioma originalInglés
Páginas (desde-hasta)103-111
Número de páginas9
PublicaciónJournal of Ovonic Research
EstadoPublicada - 1 mar. 2016

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© 2016, Virtual Institute of Physics of the Foundation Horia Hulubei. All rights reserved.


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