TY - JOUR
T1 - Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
AU - Estrada, M.
AU - Rivas, M.
AU - Garduño, I.
AU - Avila-Herrera, F.
AU - Cerdeira, A.
AU - Pavanello, M.
AU - Mejia, I.
AU - Quevedo-Lopez, M. A.
N1 - Publisher Copyright:
© 2015 Elsevier Ltd.
PY - 2016/1/1
Y1 - 2016/1/1
N2 - The temperature dependence in the typical temperature operating range from300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled. It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS=10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.
AB - The temperature dependence in the typical temperature operating range from300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled. It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS=10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.
KW - IGZO TFTs
KW - Temperature dependence
UR - http://www.scopus.com/inward/record.url?scp=84954074341&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2015.10.015
DO - 10.1016/j.microrel.2015.10.015
M3 - Artículo
SN - 0026-2714
VL - 56
SP - 29
EP - 33
JO - Microelectronics Reliability
JF - Microelectronics Reliability
ER -