Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures

Rodolfo A. Rodriguez-Davila; Pavel Bolshakov; Chadwin D. Young; Manuel Quevedo-Lopez

doi:10.1109/ICMTS.2019.8730965

Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures

Rodolfo A. Rodriguez-Davila, Pavel Bolshakov, Chadwin D. Young, Manuel Quevedo-Lopez

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

1 Cita (Scopus)

Resumen

Back-gate ZnO TFTs - with and without top-side passivation - were fabricated and electrically characterized. Passivation layers consisting of HfO₂, Al₂O₃, and Parylene were introduced to study their impact on the TFT performance. Annealing was done to improve the electrical characteristics of passivated devices by neutralizing the initial charge introduced as a result of the low-temperature passivation. Low-temperature annealing combined with an Al₂O₃passivation layer demonstrates an I-V response comparable to ZnO TFTs without any passivation layer, indicating the viability of Al₂O₃as a good candidate for passivating ZnO TFTs.

Idioma original	Inglés
Título de la publicación alojada	2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	190-193
Número de páginas	4
ISBN (versión digital)	9781728114668
DOI	https://doi.org/10.1109/ICMTS.2019.8730965
Estado	Publicada - mar. 2019
Publicado de forma externa	Sí
Evento	32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Fukuoka Prefecture, Japón Duración: 18 mar. 2019 → 21 mar. 2019

Serie de la publicación

Nombre	IEEE International Conference on Microelectronic Test Structures
Volumen	2019-March

Conferencia

Conferencia	32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
País/Territorio	Japón
Ciudad	Kitakyushu City, Fukuoka Prefecture
Período	18/03/19 → 21/03/19

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Publisher Copyright:
© 2019 IEEE.

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10.1109/ICMTS.2019.8730965

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Rodriguez-Davila, R. A., Bolshakov, P., Young, C. D., & Quevedo-Lopez, M. (2019). Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures. En 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019 (pp. 190-193). Artículo 8730965 (IEEE International Conference on Microelectronic Test Structures; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2019.8730965

Rodriguez-Davila, Rodolfo A. ; Bolshakov, Pavel ; Young, Chadwin D. et al. / Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures. 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 190-193 (IEEE International Conference on Microelectronic Test Structures).

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title = "Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures",

abstract = "Back-gate ZnO TFTs - with and without top-side passivation - were fabricated and electrically characterized. Passivation layers consisting of HfO2, Al2O3, and Parylene were introduced to study their impact on the TFT performance. Annealing was done to improve the electrical characteristics of passivated devices by neutralizing the initial charge introduced as a result of the low-temperature passivation. Low-temperature annealing combined with an Al2O3passivation layer demonstrates an I-V response comparable to ZnO TFTs without any passivation layer, indicating the viability of Al2O3as a good candidate for passivating ZnO TFTs.",

keywords = "AlO, Annealing, HfO, Passivation, TFT, ZnO",

author = "Rodriguez-Davila, {Rodolfo A.} and Pavel Bolshakov and Young, {Chadwin D.} and Manuel Quevedo-Lopez",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 ; Conference date: 18-03-2019 Through 21-03-2019",

year = "2019",

month = mar,

doi = "10.1109/ICMTS.2019.8730965",

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Rodriguez-Davila, RA, Bolshakov, P, Young, CD & Quevedo-Lopez, M 2019, Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures. En 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019., 8730965, IEEE International Conference on Microelectronic Test Structures, vol. 2019-March, Institute of Electrical and Electronics Engineers Inc., pp. 190-193, 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, Kitakyushu City, Fukuoka Prefecture, Japón, 18/03/19. https://doi.org/10.1109/ICMTS.2019.8730965

Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures. / Rodriguez-Davila, Rodolfo A.; Bolshakov, Pavel; Young, Chadwin D. et al.
2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 190-193 8730965 (IEEE International Conference on Microelectronic Test Structures; Vol. 2019-March).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

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AB - Back-gate ZnO TFTs - with and without top-side passivation - were fabricated and electrically characterized. Passivation layers consisting of HfO2, Al2O3, and Parylene were introduced to study their impact on the TFT performance. Annealing was done to improve the electrical characteristics of passivated devices by neutralizing the initial charge introduced as a result of the low-temperature passivation. Low-temperature annealing combined with an Al2O3passivation layer demonstrates an I-V response comparable to ZnO TFTs without any passivation layer, indicating the viability of Al2O3as a good candidate for passivating ZnO TFTs.

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Rodriguez-Davila RA, Bolshakov P, Young CD, Quevedo-Lopez M. Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures. En 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 190-193. 8730965. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2019.8730965

Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures

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