ZnO-based inverters for flexible electronics

G. Gutierrez-Heredia, I. Mejia, M. E. Rivas-Aguilar, F. S. Aguirre-Tostado, M. A. Quevedo-Lopez

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

In this paper, we report the development of low power and low temperature zinc oxide (ZnO)-based inverters. Logic inverters were evaluated as function of gate dielectric thicknesses and several operation bias voltages. Hafnium oxide (HfO2) was used as gate dielectric. The HfO2 dielectric thickness was evaluated from 15 to 90 nm. TFTs carrier mobility decreases as the dielectric thickness increases for a maximum bias fixed to 5 V, while threshold voltage (VTH) and threshold voltage shift (AVTH) increases. Mobility, VTH and A VTH also have a direct correlation with applied gate voltage. Inverters fabricated show high gains (up to 150) when biased at 20 V. A low-vol tage, low temperature ZnO inverter operating at VDD=2.5 V with gains ~20 is also demonstrated. Devices operating at VDD=1 V have gains ~10. This technology is a potential candidate for low-power consumption circuits for portable and low-cost applications.

Idioma originalInglés
Título de la publicación alojadaTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Páginas103-106
Número de páginas4
EstadoPublicada - 2013
Publicado de forma externa
EventoNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, Estados Unidos
Duración: 12 may. 201316 may. 2013

Serie de la publicación

NombreTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volumen2

Conferencia

ConferenciaNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
País/TerritorioEstados Unidos
CiudadWashington, DC
Período12/05/1316/05/13

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